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data sheet 1 of 11 rev. 04, 2007-11-15 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTFA211801E ptfa211801f description the PTFA211801E and ptfa211801f are thermally-enhanced, 180-watt, internally matched ldmos fets intended for wcdma applications. they are characaterized for single- and two-carrier wcdma operation from 2110 to 2170 mhz. thermally-enhanced packaging provides the coolest operation available. PTFA211801E package h-36260-2 thermally-enhanced high power rf ldmos fets 180 w, 2110 ? 2170 mhz 2-carrier wcdma drive-up v dd = 28 v, i dq = 1.2 a, f = 2140 mhz, 3gpp wcdma signal, p/a r = 8 db, 10 mhz carrier spacing -55 -50 -45 -40 -35 -30 -25 34 36 38 40 42 44 46 48 average output power (dbm) im3 (dbc), acpr (dbc) 0 5 10 15 20 25 30 drain efficiency (%) acpr efficiency im3 rf characteristics wcdma measurements (tested in infineon test fixture ) v dd = 28 v, i dq = 1.2 a, p out = 35 w average ? 1 = 2135 mhz, ? 2 = 2145 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 14.5 15.5 ? db drain efficiency h d 26 27.5 ? % intermodulation distortion imd ? ?36 ?34 dbc ptfa211801f package h-37260-2 features ? thermally-enhanced packages, pb-free and rohs-compliant ? broadband internal matching ? typical two-carrier wcdma performance at 2140 mhz, 28 v - average output power = 45.5 dbm - linear gain = 15.5 db - efficiency = 27.5% - intermodulation distortion = ?36 dbc - adjacent channel power = ?41 dbc ? typical cw performance, 2170 mhz, 30 v - output power at p?1db = 180 w - efficiency = 52% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 150?w?(cw) output power
PTFA211801E ptfa211801f data sheet 2 of 11 rev. 04, 2007-11-15 rf characteristics (cont.) cw measurements (tested in infineon test fixture ) v dd = 28 v, i dq = 1.2 a, p out = 150 w average, f = 2170 mhz characteristic symbol min typ max unit gain compression g comp ? 0.5 1.0 db two-tone measurements ( not subject to production test?verified by design/characterization in infineon test fixture ) v dd = 28 v, i dq = 1.2 a, p out = 140 w pep, ? = 2140 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps ? 15.5 ? db drain efficiency h d ? 38.5 ? % intermodulation distortion imd ? ?28 ? dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a drain leakage current v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.05 ? w operating gate voltage v ds = 28 v, i dq = 1.2 a v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 565 w above 25c derate by 3.23 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 150 w cw) r q jc 0.31 c/w
PTFA211801E ptfa211801f data sheet 3 of 11 rev. 04, 2007-11-15 two-carrier wcdma at various biases -55 -50 -45 -40 -35 -30 34 36 38 40 42 44 46 48 output power, avg. (dbm) 3rd order imd (dbc) 1.2 a 1.4 a 1.1 a 1.3 a v dd = 28 v, f = 2140 mhz, 3gpp wcdma signal, p/ar = 8 db, 10 mhz carrier spacing, series show i dq broadband performance v dd = 28 v, i dq = 1.2 a, p out = 45.0 dbm cw 5 10 15 20 25 30 2070 2090 2110 2130 2150 2170 2190 2210 frequency (mhz) gain (db), efficiency (%) -30 -25 -20 -15 -10 -5 input return loss (db) gain efficiency return loss ordering information type and version package type package description marking PTFA211801E v4 h-36260-2 thermally-enhanced slotted flange, single-ended PTFA211801E ptfa211801f v4 h-37260-2 thermally-enhanced earless flange, single-ended ptfa211801f typical performance (data taken in a production test fixture)
PTFA211801E ptfa211801f data sheet 4 of 11 rev. 04, 2007-11-15 2-tone drive-up v dd = 28 v, i dq = 1.2 a, f = 2140 mhz, tone spacing = 1 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 38 42 46 50 54 output power, pep (dbm) 0 5 10 15 20 25 30 35 40 45 drain efficiency (%) intermodulation distortion (dbc) im5 im7 im3 efficiency typical performance (cont.) intermodulation distortion products vs. tone spacing v dd = 28 v i dq = 1.2 a, f = 2140 mhz, p out = 51 dbm pep -55 -50 -45 -40 -35 -30 -25 -20 0 5 10 15 20 25 30 35 40 tone spacing (mhz) intermodulation distortion (dbc) 3rd order 5th 7th power sweep, cw conditions v dd = 28 v, i dq = 1.2 a, f = 2170 mhz 13 14 15 16 17 0 20 40 60 80 100 120 140 160 180 output power (w) gain (db) 8 21 34 47 60 drain efficiency (%) gain efficiency t case = 25c t case = 90c power sweep, cw conditions v dd = 30 v, i dq = 1.2 a, f = 2170 mhz 12 13 14 15 16 17 18 0 20 40 60 80 100 120 140 160 180 output power (w) gain (db) 0 10 20 30 40 50 60 gain efficiency
PTFA211801E ptfa211801f data sheet 5 of 11 rev. 04, 2007-11-15 single-carrier wcdma drive-up v dd = 28 v, i dq = 1.2 a, f = 2140 mhz, 3gpp wcdma signal, tm1 w/16 dpch, 67% clipping, p/a r = 8.5 db, 3.84 mhz bw -50 -45 -40 -35 -30 34 36 38 40 42 44 46 48 average output power (dbm) 0 5 10 15 20 25 30 35 drain efficiency (%), gain (db) adjacent channel power ratio (db) efficiency gain acpr up acpr low typical performance (cont.) voltage sweep -45 -40 -35 -30 -25 -20 -15 -10 23 24 25 26 27 28 29 30 31 32 33 supply voltage (v) 3rd order intermodulation distortion (dbc) 10 15 20 25 30 35 40 45 i dq = 1.2 a, f = 2140 mhz, p out = 51 dbm pep, tone spacing = 1 mhz gain efficiency im3 up gain (db), drain efficiency (%) bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.3 a 0.9 a 1.5 a 2.3 a 4.5 a 6.8 a 9.0 a 11.3 a 13.5 a
PTFA211801E ptfa211801f data sheet 6 of 11 rev. 04, 2007-11-15 z source z load g s d frequency z source w z load w mhz r jx r jx 2070 7.2 ?0.5 1.5 2.3 2110 7.8 ?0.2 1.4 2.6 2140 8.4 ?0.0 1.4 2.8 2170 9.1 0.0 1.4 3.0 2210 10.0 ?0.2 1.3 3.4 see next page for reference circuit information 0.1 0.3 0.2 0 . 1 0 . 0 . 1 n e r a t o r w a v e l e n g t h s t o w a r d l o a d - 0 . 0 z load z source 2210 mhz 2210 mhz 2070 mhz 2070 mhz z 0 = 50 w broadband circuit impedance
PTFA211801E ptfa211801f data sheet 7 of 11 rev. 04, 2007-11-15 circuit assembly information dut PTFA211801E or ptfa211801f ldmos transistor pcb 0.76 mm [.030"] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 2140 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.097 l , 50.0 w 7.37 x 1.40 0.290 x 0.055 l 2 0.267 l , 50.0 w 19.86 x 1.40 0.782 x 0.055 l 3 0.136 l , 42.0 w 10.24 x 1.85 0.403 x 0.073 l 4 0.087 l , 42.0 w 6.50 x 1.85 0.256 x 0.073 l 5 0.018 l , 11.4 w 1.24 x 10.24 0.049 x 0.403 l 6 0.077 l , 6.9 w 5.23 x 17.78 0.206 x 0.700 l 7 0.207 l , 48.0 w 15.70 x 1.50 0.618 x 0.059 l 8, l 9 0.256 l , 45.0 w 19.30 x 1.65 0.760 x 0.065 l 10 0.087 l , 5.0 w 5.84 x 25.40 0.230 x 1.000 l 11 (taper) 0.073 l , 5.0 w / 40.0 w 5.59 x 25.40 / 1.98 0.220 x 1.000 / 0.078 l 12 0.019 l , 40.0 w 1.45 x 1.98 0.057 x 0.078 l 13 0.087 l , 50.0 w 6.65 x 1.40 0.262 x 0.055 l 14 0.403 l , 50.0 w 30.73 x 1.40 1.210 x 0.055 1 electrical characteristics are rounded. a211801ef_sch 8.2pf 1f 0.5pf 9.1pf 0.02f 22f 1f l 1 l 3 l 4 l 6 l 8 l 9 l 10 dut c12 c13 c14 c15 c9 c19 c18 c17 c16 l 11 50v l 7 l 2 0.1f c6 0.1f c5 r6 10f 35v c4 5.1k v r7 .01f c7 9.1pf c8 c10 5.1k v l 5 c11 r8 5.1k v 10 r9 v 1.5pf c21 8.2pf l 14 l 12 c20 0.3pf l 13 r5 10 v 0.02f 22f 50v 9.1pf r3 2k v r4 2k v c3 0.001f c2 0.001f bcp56 r2 1.3k v r1 1.2k v lm7805 c1 0.001f qq1 q1 v dd v dd rf_out rf_in reference circuit reference circuit schematic for ? = 2140 mhz
PTFA211801E ptfa211801f data sheet 8 of 11 rev. 04, 2007-11-15 reference circuit assembly diagram* (not to scale) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key pcs6106tr-nd c5, c6 capacitor, 0.1 f digi-key pcc104bct c7 capacitor, 0.01 f atc 200b103 c8, c12, c16 ceramic capacitor, 9.1 pf atc 100b 9r1 c9 ceramic capacitor, 0.5 pf atc 100b 0r5 c10, c21 ceramic capacitor, 8.2 pf atc 100b 8r2 c11 ceramic capacitor, 1.5 pf atc 100b 1r5 c13, c17 ceramic capacitor, 0.02 f atc 200b 203 c14, c18 ceramic capacitor, 1 f atc 920c105 c15, c19 electrolytic capacitor, 22 f, 50 v digi-key pce3374ct-nd c20 ceramic capacitor, 0.3 pf atc 100b 0r3 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor, 2 k-ohms digi-key p2kect-nd r4 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd r5, r9 chip resistor, 10 ohms digi-key p10ect-nd r6, r7, r8 chip resistor, 5.1 k-ohms digi-key p5.1kect-nd reference circuit (cont.) *gerber files for this circuit available on request a211801ef_assy 10 35v + lm rf_in rf_out
PTFA211801E ptfa211801f data sheet 9 of 11 rev. 04, 2007-11-15 package outline specifications package h-36260-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products c l c l 260-cases_30260 / 11-15-07 0.0381 [.0015] -a- 22.350.23 [.880.009] (2x 4.830.50 [.190.020]) 2x 12.70 [.500] 23.370.51 [.920.020] 4x r 1.52 [.060] 2x 3.25 [.128] 34.04 [1.340] d s g flange 13.72 [.540] 45 x 2.03 [.080] sph 1.57 [.062] 2x 1.63 [.064] r 4.110.38 [.162.015] 27.94 [1.100] c l 1.02 [.040] +0.10 lid 13.21 ?0.15 +.004 [.520 ] ?.006
PTFA211801E ptfa211801f data sheet 10 of 11 rev. 04, 2007-11-15 package outline specifications (cont.) package h-37260-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products +0.10 lid 13.21 ?0.15 +.004 [.520 ] ?.006 c l c l 260-cases_31260_11-15-07 sph 1.57 [.062] 23.370.51 [.920.020] 2x 12.70 [.500] 45 x 2.031 [.080] d g s -a- 4.110.38 [.162.015] lid 22.350.23 [.880.009] flange 23.11 [.910] 13.72 [.540] 2x 4.830.50 [.190.020] 0.0381 [.0015] 4x r 0.89 [r.035] max 1.02 [.040]
data sheet 11 of 11 rev. 04, 2007-11-15 PTFA211801E/f confidential, limited internal distribution revision history: 2007-11-15 data sheet previous version: 2005-06-10, data sheet page subjects (major changes since last revision) 1, 3, 9, 10 update product to v 4.1, with new package technologies. update package outline diagrams. goldmos ? is a registered trademark of infineon technologies ag. edition 2007-11-15 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2005. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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